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   /    #!= +;f!3*3*  h  -<*%!)28! * parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode)  p-n junction diode. v sd diode forward voltage ??? ??? -1.2 v t j = 25c, i s = -0.61a, v gs = 0v  t rr reverse recovery time ??? 35 53 ns t j = 25c, i f = -0.61a q rr reverse recovery charge ??? 26 39 nc di/dt = -100a/s  $ %


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www.irf.com 3  

          

         
 0.01 0.1 1 10 0.1 1 10 d ds 20s pulse width t = 25c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) j -1.5v vgs top - 7.5v - 5.0v - 4.0v - 3.5v - 3.0v - 2.5v - 2.0v bottom - 1.5v 0.01 0.1 1 10 0.1 1 10 d ds 20s pulse width t = 150c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) j vgs top - 7.5v - 5.0v - 4.0v - 3.5v - 3.0v - 2.5v - 2.0v bottom - 1.5v -1.5v 0.01 0.1 1 10 1.5 2.0 2.5 3.0 3.5 4.0 4.5 t = 25c t = 150c j j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) v = -10v 20s pulse width ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a i = -0.61a v = -4.5v d gs

www.irf.com 4 
     
    
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  0 20 40 60 80 100 120 140 160 180 1 10 100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 2 4 6 8 10 0.0 1.0 2.0 3.0 4.0 g gs a -v , gate-to-source voltage (v) q , total gate charge (nc) i = -0.61a v = -16v for test circuit see figure 9 d ds 0.01 0.1 1 10 0.4 0.6 0.8 1.0 1.2 1.4 t = 25c t = 150c j j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) 0.1 1 10 1 10 100 operation in this area limited by r ds(on) t = 25c t = 150c single pulse a -i , drain current (a) -v , drain-to-source voltage (v) ds d a j 100s 1ms 10ms

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www.irf.com 6  
       p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - -    2    ? !0!* !832  ?   * !833)*@@ ? i 0*i!  

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www.irf.com 7 micro3 (sot-23 / to-236ab) part marking information    !
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 note: for the most current drawing please refer to ir website at http://www.irf.com/package

www.irf.com 8 data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/2007  ? 

       %         2.05 ( .080 ) 1.95 ( .077 ) tr feed direction 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 1.1 ( .043 ) 0.9 ( .036 ) 4.1 ( .161 ) 3.9 ( .154 ) 0.35 ( .013 ) 0.25 ( .010 ) 8.3 ( .326 ) 7.9 ( .312 ) 1.32 ( .051 ) 1.12 ( .045 ) 9.90 ( .390 ) 8.40 ( .331 ) 178.00 ( 7.008 ) max. notes: 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. note: for the most current drawing please refer to ir website at http://www.irf.com/package


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